Sb/SnO2 bi-layer films were prepared using ion beam sputtering deposition (IBSD) and radio frequency (RF) magnetron sputtering deposition. The optimal parameters of SnO2 thin films were found to be dependent on the processing conditions of vacuum pressure and flow ratio of O-2/(O-2+Ar). The as deposited bi-layer films were treated by ex situ pulsed ultraviolet laser beam at 355 nm for the assistance of Sb-ion with SnO2 interface. This paper takes a closer look at the characteristics of the laser irradiation effect of Sb/SnO(2)bi-layer films on the optical and electrical behavior and the interface microstructure of Sb/SnO2 by high resolution transmission electron microscopy (HR-TEM). After UV pulse laser irradiation of bi-layer films, crystalline Sb between amorphous Sb and SnO2 nanocrystalline thin films was observed. (C) 2012 Elsevier B.V. All rights reserved.
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Univ El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, AlgeriaUniv El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, Algeria
Benhaoua, Boubaker
Abbas, Soumaia
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Univ El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, Algeria
Univ Ouargla, Fac Math & Mat Sci, Ourgla 30000, AlgeriaUniv El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, Algeria
Abbas, Soumaia
Rahal, Achour
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Univ El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, Algeria
Univ Biskra, Fac Sci, Biskra 07000, AlgeriaUniv El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, Algeria
Rahal, Achour
Benhaoua, Atmane
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Univ El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, Algeria
Univ Ouargla, Fac Math & Mat Sci, Ourgla 30000, AlgeriaUniv El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, Algeria
Benhaoua, Atmane
Aida, M. S.
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Mentouri Univ, Dept Phys, Thin Films & Pasma Lab, Constantine 2500, AlgeriaUniv El Oued, Fac Sci & Technol, Lab VTRS, El Oued 39000, Algeria
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Natl Inst Technol, Tiruchirappalli 620015, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Balakrishnan, G.
Kuppusami, P.
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Indira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Kuppusami, P.
Sundari, S. Tripura
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Indira Gandhi Ctr Atom Res, Surface & Nanomat Div, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Sundari, S. Tripura
Thirumurugesan, R.
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Indira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Thirumurugesan, R.
Ganesan, V.
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UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Ganesan, V.
Mohandas, E.
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Indira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Mohandas, E.
Sastikumar, D.
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Natl Inst Technol, Tiruchirappalli 620015, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India