An acceleration sensor in CMOS-compatible technology for integration in complex systems

被引：5

作者：

Lang, M

Glesner, M

机构：

[1] Darmstadt University of Technology, Institute of Microelectronic Systems, D-64583 Darmstadt

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1997年 / 7卷 / 03期

关键词：

D O I：

10.1088/0960-1317/7/3/030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design of an acceleration sensor with an integrated amplifier in CMOS-compatible technology is described. The whole system is fabricated using a standard 1.0 mu m CMOS technology with only one additional micromachining fabrication step, avoiding bond steps or CVD of additional materials. The sensing element is based on the use of the piezoresistive effect. The outlook for the use of the acceleration sensor as a standard component for microsystems design is anticipated.

引用

页码：193 / 195

页数：3