Instabilities in Silicon Power Devices A Review of Failure Mechanisms in Modern Power Devices

被引：35
作者：
Iannuzzo, Francesco [1 ]
Abbate, Carmine [2 ]
Busatto, Giovanni [1 ,3 ,4 ,5 ]
机构：
[1] Univ Cassino & Southern Lazio, Cassino, Italy
[2] Univ Cassino & Southern Lazio, LEI, Cassino, Italy
[3] CNR, Ist Ric Elettromagnetismo & Componenti Elettron, Bologna, Italy
[4] Univ Naples Federico II, I-80138 Naples, Italy
[5] Univ Cassino, Cassino, Italy
来源：
IEEE INDUSTRIAL ELECTRONICS MAGAZINE | 2014年 / 8卷 / 03期
关键词：
DYNAMIC AVALANCHE; REVERSE RECOVERY; PIN DIODE; TURN-OFF; MOSFETS; IGBTS; TRANSISTORS; CAPACITANCE; FILAMENTS;
D O I：
10.1109/MIE.2014.2305758
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the last 15 years, the global demand for power saving, efficiency, and weight, size, and cost reduction in both the consumer and the industrial fields have strongly pushed the research and advancements in electronic power systems. Today, electronic power systems cover nearly the full voltage range (from volts to megavolts) and almost the full power range, if we exclude gigawatt-rated power plants. The applications include: © 2007-2011 IEEE.
引用
收藏
页码：28 / 39
页数：12
相关论文
共 81 条
  • [1] Modeling the Electrothermal Stability of Power MOSFETs During Switching Transients
    Alatise, Olayiwola
    Parker-Allotey, Nii-Adotei
    Mawby, Phil
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 1039 - 1041
  • [2] Understanding Linear-Mode Robustness in Low-Voltage Trench Power MOSFETs
    Alatise, Olayiwola Muktahir
    Kennedy, Ian
    Petkos, George
    Khan, Khalid
    Koh, Adrian
    Rutter, Phil
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (01) : 123 - 129
  • [3] On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior
    Allard, Bruno
    Garrab, Hatem
    Ben Salah, Tarek Ben
    Morel, Herve
    Ammous, Kaicar
    Besbes, Katnel
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2008, 23 (01) : 491 - 494
  • [4] [Anonymous], FDB12N50F N CHANN UN
  • [5] [Anonymous], STB9NK60ZD N CHANN 6
  • [6] [Anonymous], IRFR825PBF HEXFET PO
  • [7] Cathode-Side Current Filaments in High-Voltage Power Diodes Beyond the SOA Limit
    Baburske, Roman
    Niedernostheide, Franz-Josef
    Lutz, Josef
    Schulze, Hans-Joachim
    Falck, Elmar
    Bauer, Josef Georg
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (07) : 2308 - 2317
  • [8] Baburske R, 2012, PROC INT SYMP POWER, P365, DOI 10.1109/ISPSD.2012.6229097
  • [9] Baburske R, 2010, PROC INT SYMP POWER, P165
  • [10] On the formation of stationary destructive cathode-side filaments in p+-n--n+ diodes
    Baburske, Roman
    Heinze, Birk
    Niedernostheide, Franz-Josef
    Lutz, Josef
    Silber, Dieter
    [J]. 2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, : 41 - +
123456789