Epitaxial growth of single-orientation high-quality MoS2 monolayers

被引：78

作者：

Bana, Harsh ^{[1
]}

Travaglia, Elisabetta ^{[1
]}

Bignardi, Luca ^{[2
]}

Lacovig, Paolo ^{[2
]}

Sanders, Charlotte E. ^{[3
]}

Dendzik, Maciej ^{[3
]}

Michiardi, Matteo ^{[3
]}

Bianchi, Marco ^{[3
]}

Lizzit, Daniel ^{[2
]}

Presel, Francesco ^{[1
]}

De Angelis, Dario ^{[1
]}

Apostol, Nicoleta ^{[4
]}

Das, Pranab Kumar ^{[5
,6
]}

Fujii, Jun ^{[6
]}

Vobornik, Ivana ^{[6
]}

Larciprete, Rosanna ^{[7
]}

Baraldi, Alessandro ^{[1
,2
,6
]}

Hofmann, Philip ^{[3
]}

Lizzit, Silvano ^{[2
]}

机构：

[1] Univ Trieste, Dept Phys, Via Valerio 2, I-34127 Trieste, Italy

[2] Elettra Sincrotrone Trieste SCpA, Str Statale 14,Km 163-5, I-34149 Trieste, Italy

[3] Aarhus Univ, Interdisciplinary Nanosci Ctr iNANO, Dept Phys & Astron, Ny Munkegade 120, DK-8000 Aarhus C, Denmark

[4] Natl Inst Mat Phys, Atomistilor Str 405A, Bucharest 077125, Romania

[5] Abdus Salam Int Ctr Theoret Phys, Str Costiera 11, I-34151 Trieste, Italy

[6] CNR, IOM, Lab TASC, Str Statale 14,Km 163-5, I-34149 Trieste, Italy

[7] CNR, Inst Complex Syst, Via Taurini 19, I-00185 Rome, Italy

来源：

2D MATERIALS | 2018年 / 5卷 / 03期

关键词：

MoS2; photoelectron diffraction; transition metal dichalcogenides; photoelectron spectroscopy; DER-WAALS EPITAXY; LAYER MOS2; VALLEY POLARIZATION; SPIN POLARIZATION; BAND-STRUCTURE; PHOTOLUMINESCENCE; BEAMLINE; GRAPHENE;

D O I：

10.1088/2053-1583/aabb74

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a study on the growth and characterization of high-quality single-layer MoS2 with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS2 layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin-and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.

引用

页数：9

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