Graphene-Based Floating-Gate Nonvolatile Optical Switch

被引:25
|
作者
Li, Yan [1 ]
Yu, Hui [1 ]
Dai, Tingge [1 ]
Jiang, Jianfei [1 ]
Wang, Gencheng [1 ]
Yang, Longzhi [1 ]
Wang, Wanjun [2 ]
Yang, Jianyi [1 ]
Jiang, Xiaoqing [1 ]
机构
[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] China Elect Technol Grp Corp, Res Inst 38, Hefei 230088, Peoples R China
基金
中国国家自然科学基金;
关键词
Integrated optics; nonvolatile; floating gate; graphene; optical switch; LAYER; DEVICES;
D O I
10.1109/LPT.2015.2494876
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We proposed a nonvolatile optical waveguide switch by utilizing a floating-gate (FG) configuration whose FG layer is a single-layer graphene. The switching signal can be removed after the optical switching is accomplished. The propagation state of light then can be retained by charges trapped in the graphene layer until the next erasing signal. Depending on waveforms of driving signals, the device can work as either a phase shifter or an intensity switch. In the phase shifter mode, a 646-mu m-long device can achieve a phase shift of pi. Corresponding energy consumptions to program/erase, the pi phase shift is 82.8 and 118.2 pJ, respectively. In the intensity switch mode, a 328-mu m-long device is able to attenuate the light by 20 dB. Energies consumed by the programming and the erasing operations are 35.7 and 45.4 pJ, respectively.
引用
收藏
页码:284 / 287
页数:4
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