Influence of temperature on spin polarization dynamics in dilute nitride semiconductors-Role of nonparamagnetic centers

被引:4
作者
Baranowski, M. [1 ]
Misiewicz, J. [1 ]
机构
[1] Wroclaw Univ Technol, Dept Expt Phys, Lab Opt Spect Nanostruct, PL-50370 Wroclaw, Poland
关键词
MOLECULAR-BEAM EPITAXY; ROOM-TEMPERATURE; QUANTUM-WELLS; ELECTRON; RECOMBINATION; INJECTION; ORIGIN; GAASN;
D O I
10.1063/1.4933385
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures. (C) 2015 AIP Publishing LLC.
引用
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页数:6
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