Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide

被引：31

作者：

Lederer, M. ^{[1
]}

Reck, A. ^{[1
]}

Mertens, K. ^{[1
]}

Olivo, R. ^{[1
]}

Bagul, P. ^{[1
]}

Kia, A. ^{[1
]}

Volkmann, B. ^{[2
]}

Kaempfe, T. ^{[1
]}

Seidel, K. ^{[1
]}

Eng, L. M. ^{[3
]}

机构：

[1] Fraunhofer IPMS, Konigsbrucker Str 178, D-01099 Dresden, Germany

[2] GLOBALFOUNDRIES Fab 1 LLC & Co KG, D-01109 Dresden, Germany

[3] Tech Univ Dresden, Inst Angew Phys, D-01069 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 01期

关键词：

FILMS;

D O I：

10.1063/5.0029635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Applying transmission Kikuchi diffraction (TKD) allows us to fundamentally investigate the Si-doped-hafnium-oxide (HSO) microstructure that results from the interface layer present in ferroelectric field-effect transistors. In addition to the predominant orthorhombic phase, dendritic HSO grains larger than 100nm govern the microstructure composition. Furthermore, the observed strong out-of-plane texture aligned along the [110] and [011] axis clearly differs from features found in hafnium oxide thin films grown on TiN layers. Our TKD analysis shows that the texture intensity strongly varies for samples annealed at different temperatures. Additionally, intra-granular misorientation and chemical composition analyses of the layers provide insight into the crystallization process of these ferroelectric thin films.

引用

页数：5

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