Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

被引:49
作者
Mitani, Takeshi [1 ,2 ]
Komatsu, Naoyoshi [1 ]
Takahashi, Tetsuo [1 ,2 ]
Kato, Tomohisa [1 ,2 ]
Fujii, Kuniharu [1 ,5 ]
Ujihara, Toru [3 ]
Matsumoto, Yuji [4 ]
Kurashige, Kazuhisa [1 ,5 ]
Okumura, Hajime [1 ,2 ]
机构
[1] R&D Partnership Future Power Elect Technol, Tsukuba, Ibaraki 3058569, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan
[3] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan
[4] Tohoku Univ, Dept Appl Chem, Aoba Ku, Sendai, Miyagi 9808579, Japan
[5] Hitachi Chem Co Ltd, Tsukuba Res Lab, Tsukuba, Ibaraki 3004247, Japan
关键词
Roughening; Surface structure; Growth from solution; Top seeded solution growth; Silicon carbide; CONVERSION; SYSTEMS; MELT;
D O I
10.1016/j.jcrysgro.2013.11.031
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrx and Si1-x-yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 mu m/h. Conversely, trench-like defects were observed in crystals grown with Si-1 Cr-x(x), solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAly solvents was maintained at lower levels than that obtained using Si1-xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:681 / 685
页数:5
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