The influence of sputtering time and oxygen partial pressure on electrical resistivity of Bi:2201 thin films

被引：5
作者：
Pop, A
Ilonca, G
Deltour, R
机构：
[1] Univ Babes Bolyai, Fac Phys, R-3400 Cluj Napoca, Romania
[2] Free Univ Brussels, Brussels, Belgium
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2004年 / 18卷 / 14期
关键词：
Bi : 2201 thin film; sputtering deposition; electrical resistiviy;
D O I：
10.1142/S0217979204025233
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By using different times of sputtering and different value of partial pressure of oxygen in sputtering gas, Bi2.1Sr1.9CuOy thin films (Bi:2201) were deposited onto heated single crystal (100) MgO substrates. The temperature dependence of the in-plane resistivity measured on epitaxial c-axis thin films is strongly influenced by the thin films synthesis conditions. Electrical resistivity changes strongly from optimal doping superconducting state to underdoped insulator state with decreasing partial pressure in sputtering gas. The increase of electrical resistance near superconducting transition were analyzed by using some theoretical models.
引用
收藏
页码：2085 / 2090
页数：6
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