Improved PSi/c-Si and Ga/PSi/c-Si nanostructures dependent solar cell efficiency

Nanometre size semiconductors have been a topic of great interest. Porous silicon surfaces have been fabricated by photoelectrochemical etching for n-type silicon wafers. The objective of this paper focuses on the investigation of the effecting of deposited p-Ga/n-PSi on the performance of silicon solar cells. Gallium thin layer (400 nm) doped n-type porous silicon has been Determined by photoluminescence spectroscopy. Ga doping process was carried out by a physical vapor deposition technique and has subsequently been annealed at 1100 degrees C for 3 h. The surface morphology resulting from this process was observed by scanning electron microscopy. The measured spectra illustrate that the luminescence peak of PSi-doped Ga was shifted strongly to a shorter wavelength. One luminescence band appears at the peak of about similar to 612 nm for PSi/c-Si; while the photoluminescence spectrum of Ga/PSi/c-Si is produced by two light bands with peaks about similar to 435 and similar to 830 nm. The fabricated solar cell showed good photovoltaic properties were the conversion efficiency increased from (12.25 to 14.8%) and the filling factor increased from (79.47-82.33) in comparison with other solar cells.