Ammonothermal Bulk GaN Substrates for Power Electronics

被引：7

作者：

D'Evelyn, M. P. ^{[1
]}

Ehrentraut, D. ^{[1
]}

Jiang, W. ^{[1
]}

Kamber, D. S. ^{[1
]}

Downey, B. C. ^{[1
]}

Pakalapati, R. T. ^{[1
]}

Yoo, H. -D. ^{[1
]}

机构：

[1] Soraa Inc, Goleta, CA 93117 USA

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3 | 2013年 / 58卷 / 04期

基金：

美国国家科学基金会;

关键词：

GALLIUM NITRIDE; CRYSTAL-GROWTH; CAVET;

D O I：

10.1149/05804.0287ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Soraa has developed a novel ammonothermal approach for growth of high quality, true bulk GaN crystals at a greatly reduced cost, known as SCoRA (Scalable Compact Rapid Ammonothermal). SCoRA GaN growth has been performed on seed crystals with diameters between 5 mm and 2 '' to thicknesses of 0.5-4 mm. The highest growth rates are greater than 40 mu m/h and rates in the 1030 mu m/h range are routinely observed. Two-inch diameter, crack-free, free-standing, n-type bulk GaN crystals have been grown. The crystals have been characterized by a range of techniques, including x-ray diffraction rocking-curve (XRC) analysis, optical microscopy, cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is very good, with FWHM values of 15-80 arc-sec and average dislocation densities below 5x10(5) cm(-2).

引用

页码：287 / 294

页数：8

共 28 条

[1]

Chowdhury Srabanti, 2010, 2010 68th Annual Device Research Conference (DRC 2010), P201, DOI 10.1109/DRC.2010.5551906

[2] Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer [J].