Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates

被引：0
作者：
Georgakilas, A
Androulidaki, M
Tsagraki, K
Amimer, K
Constantinidis, G
Pelekanos, NT
Calamiotou, M
Czigany, Z
Pecz, B
机构：
[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, G-71110 Heraklion, Crete, Greece
[2] Univ Crete, Dept Phys, Heraklion, Crete, Greece
[3] Commissariat Energie Atom, Lab Phys Semicond, DRFMC, SP2M, F-38054 Grenoble, France
[4] Univ Athens, Dept Phys, G-15784 Zografos, Greece
[5] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1999年 / 176卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199911)176:1<525::AID-PSSA525>3.0.CO;2-M
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cubic GaN layers have been grown by rf-plasma source Molecular Beam Epitaxy (MBE) directly on vicinal (100) GaAs substrates, misoriented by 2 degrees toward [001], without using an incident As beam during oxide desorption or the following stages of growth. Step-flow growth mechanism and step bunching increasing with the growth temperature (T-G) characterized the surfaces. A room temperature photoluminescence peak at 3.216 eV with 58 meV linewidth was obtained for T-G = 630 degrees C.
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页码：525 / 528
页数：4
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