Updated Analysis of Low-Temperature Data of Hall-Effect Measurements on P-Doped n-Si on the Basis of an Impurity-Hubbard-Band Model

The low-temperature data of Hall-effect measurements on uncompensated P-doped n-Si samples with different P concentrations N-D reported in literature have been analyzed on the basis of an impurity-Hubbard-band model. In the model, the drift mobility and the Hall factor of nearestneighbor hopping in the top Hubbard band are assumed to be expressed as mu(2) = mu(20)(E-2/k(B)T)(3/2) exp(-E-2/k(B)T) and A(H2) = (k(B)T/J(H2)) exp(KH2E2/k(B)T), respectively, according to the small-polaron model, while those of variable-range hopping in the bottom Hubbard band are assumed to be expressed as mu(3) = mu(30)(T-ES/T)(1/3) exp[-(T-ES/T)(1/2)] and A(H3) = A(H30)(T-ES/T)(2/3)exp[(1-(V) over bar) (T-ES/ T)(1/2)] according to the Efros-Shklovskii model. With the critical concentration of N-c = 3.52 x 10(18) cm(-3) for the metal-insulator transition, the deduced values of T-ES have been proved to obey the relation of T-ES = T-00(1-N-D/N-c)(p) with p = 2.9 and T-00 = 11000 K. In addition, the Coulomb gap has been proved to obey the relation of Delta(CG) = Delta(CG0)(1-N-D/N-c)(n) with n = 2.5 and Delta(CG0) = 30 meV.