Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

被引:247
作者
Stockklauser, A. [1 ]
Scarlino, P. [1 ]
Koski, J. V. [1 ]
Gasparinetti, S. [1 ]
Andersen, C. K. [1 ]
Reichl, C. [1 ]
Wegscheider, W. [1 ]
Ihn, T. [1 ]
Ensslin, K. [1 ]
Wallraff, A. [1 ]
机构
[1] ETH, Dept Phys, CH-8093 Zurich, Switzerland
基金
瑞士国家科学基金会;
关键词
CIRCUIT; QUBIT; ELECTRODYNAMICS; PHOTONS; ATOM; SPIN;
D O I
10.1103/PhysRevX.7.011030
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The strong coupling limit of cavity quantum electrodynamics (QED) implies the capability of a matterlike quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work, we demonstrate strong coupling between the charge degree of freedom in a gate-defined GaAs double quantum dot (DQD) and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices. In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2 pi = 238 MHz at a resonator linewidth kappa/2 pi = 12 MHz and a DQD charge qubit decoherence rate of gamma(2) = 2 pi = 40 MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit-based cavity QED for quantum information processing in semiconductor nanostructures.
引用
收藏
页数:6
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