An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients

被引：0

作者：

Radu, Constantin-Lucian ^{[1
]}

Li, Ke ^{[1
]}

Igic, Petar ^{[1
]}

Shepherd, Simon ^{[1
]}

Woerndle, Annegret ^{[2
]}

Van der Broeck, Christoph H. ^{[2
]}

Faramehr, Soroush ^{[1
]}

机构：

[1] Coventry Univ, CGFM, Coventry, W Midlands, England

[2] FEV Europe GmbH, Aachen, Germany

来源：

2022 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN EUROPE (WIPDA EUROPE) | 2022年

关键词：

model; SiC MOSFET; body diode; stray inductance; switching transients; calibration; tuning; VOLTAGE;

D O I：

10.1109/WIPDAEUROPE55971.2022.9936259

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Accurate switching transients modelling is important for SiC power converter layout optimisation. A SiC-MOSFET manufacturer model is used as a reference. Although the manufacturer model correctly represents device output and capacitance characteristics, there are discrepancies between modelled switching transients and experiment results. To improve the model, we propose a method to accurately model stored charge and use Ansys Q3D to model stray inductance inside device packaging. As a result, the model has been improved by 70% regarding Vcs oscillation amplitude and 50% regarding current overshoot and overall transient behaviour in di/dt and dv/dt.

引用

页数：6

共 2 条

[1] Switching Loss Analysis of SiC-MOSFET based on Stray Inductance Scaling
Wada, Keiji
Ando, Masato
2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA), 2018, : 1919 - 1924
[2] Improved Clamping Capability of Parasitic Body Diode Utilizing New Equivalent Circuit Model of SBD-embedded SiC MOSFET
Ohashi, Teruyuki
Kono, Hiroshi
Kanie, Souzou
Ogata, Takahiro
Sano, Kenya
Suzuki, Hisashi
Asaba, Shunsuke
Fukatsu, Shigeto
Iijima, Ryosuke
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2021, : 79 - 82

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