Energy harvesting in silicon Raman amplifiers

被引：31
作者：
Fathpour, S. [1 ]
Tsia, K. K. [1 ]
Jalali, B. [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 06期
关键词：
D O I：
10.1063/1.2335625
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Continuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices. (c) 2006 American Institute of Physics.
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页数：3
相关论文
共 17 条
[1]  
[Anonymous], SPRINGER SERIES OPTI
[2]   Influence of nonlinear absorption on Raman amplification in Silicon waveguides [J].
Claps, R ;
Raghunathan, V ;
Dimitropoulos, D ;
Jalali, B .
OPTICS EXPRESS, 2004, 12 (12) :2774-2780
[3]   Observation of stimulated Raman amplification in silicon waveguides [J].
Claps, R ;
Dimitropoulos, D ;
Raghunathan, V ;
Han, Y ;
Jalali, B .
OPTICS EXPRESS, 2003, 11 (15) :1731-1739
[4]   Observation of Raman emission in silicon waveguides at 1.54 μm [J].
Claps, R ;
Dimitropoulos, D ;
Han, Y ;
Jalali, B .
OPTICS EXPRESS, 2002, 10 (22) :1305-1313
[5]   Anti-Stokes Raman conversion in silicon waveguides [J].
Claps, R ;
Raghunathan, V ;
Dimitropoulos, D ;
Jalali, B .
OPTICS EXPRESS, 2003, 11 (22) :2862-2872
[6]   Limitations of active carrier removal in silicon Raman amplifiers and lasers [J].
Dimitropoulos, D ;
Fathpour, S ;
Jalali, B .
APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3
[7]  
EPINOLA RL, 2004, OPT EXPRESS, V12, P3713
[8]   C-band wavelength conversion in silicon photonic wire waveguides [J].
Espinola, RL ;
Dadap, JI ;
Osgood, RM ;
McNab, SJ ;
Vlasov, YA .
OPTICS EXPRESS, 2005, 13 (11) :4341-4349
[9]  
FATHPOUR S, 2006, IN PRESS IEEE C LAS
[10]   Power-constrained CMOS scaling limits [J].
Frank, DJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2002, 46 (2-3) :235-244
12