On the annealing effects of GaN metal-insulator-semiconductor capacitors with photo-chemical vapor deposition oxide layers

被引：0

作者：

Chiou, Yu-Zung ^{[1
]}

机构：

[1] So Taiwan Technol, Dept Elect Engn, Tainan 710, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期

关键词：

GaN; photo-CVD; SiO2; MIS capacitors;

D O I：

10.1143/JJAP.45.3045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN metal-insulator-semicouductor (MIS) capacitors with photo-assisted chemical vapor deposition (photo-CVD) SiO2 as the insulators were fabricated. The annealing effects of these capacitors were also investigated. It was found that we could significantly improve the electrical properties of the capacitors either by an in-situ annealing in O-2 at 400 degrees C or by an ex-situ furnace annealing in N-2 at 800 degrees C. It Was also found that photo-CVD annealing is an effective tool to improve the GaN MIS capacitors at low temperatures.

引用

页码：3045 / 3048

页数：4

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