Selective lasing of InGaAs quantum-wire array on a V-grooved GaAs substrate by distributed optical feedback

被引：8

作者：

Toda, T ^{[1
]}

Reinhardt, F

Martinet, E

Kapon, E

Nakano, Y

机构：

[1] Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland

[2] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 12期

基金：

日本学术振兴会;

关键词：

active grating; DFB laser; distributed feedback laser; MOVPE; strained InGaAs; quantum wire; V-grooved substrates;

D O I：

10.1109/68.806835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Distributed-feedback (DFB) lasers were fabricated by using strained InGaAs quantum-wire (QWR) arrays on V-grooved GaAs substrates as an active grating. After characterizing the luminescence from the QWR's and parasitic quantum wells (QWL's), a DFB laser cavity incorporating such a QWR array with its emission wavelength matched to the Bragg wavelength was designed and fabricated. The wavelength selectivity of the DFB cavity was found to strongly support the QWR emission, and DFB lasing from QWR gain up to 145K; has been achieved under pulsed current, The emission from the parasitic QWL's was suppressed by the DFB filtering and the loss induced by coupling to radiation modes. The DFB cavity was shown to be essential for obtaining lasing from QWR's on V-grooved substrates.

引用

页码：1530 / 1532

页数：3

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