Photonic integration: Si or InP substrates?

被引：54

作者：

Liang, D. ^{[1
]}

Bowers, J. E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 12期

关键词：

D O I：

10.1049/el.2009.1279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A brief review of recent progress in photonic integrated circuits (PICs) is presented. By examining Moore's Law and the roadmap of conventional electronic ICs, valuable lessons in host material selection for PICs are discussed. Finding a primary host material for integration is necessary and vital to the success of the PIC industry. Initial success has been achieved in both InP-based and silicon-based commercial PICs; however, we believe that cost and performance may select silicon as the primary host material, with the urgency to deploy optical interconnects on Si electronic ICs as one of the main reasons. A recently introduced hybrid silicon evanescent platform and devices and silicon/germanium APDs are reviewed as examples to understand the viability of silicon PICs and lead to an understanding of a possible roadmap to next generation large-scale PICs.

引用

页码：578 / 580

页数：3

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