Arrayed waveguide grating demultiplexers in silicon-on-insulator

被引:24
|
作者
Pearson, MRT [1 ]
Bezinger, A [1 ]
Delâge, A [1 ]
Fraser, JW [1 ]
Janz, S [1 ]
Jessop, PE [1 ]
Xu, DX [1 ]
机构
[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
来源
SILICON-BASED OPTOELECTRONICS II | 2000年 / 3953卷
关键词
Si; silicon-on-insulator; WDM; arrayed waveguide grating; phased array; waveguide;
D O I
10.1117/12.379610
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents theoretical and experimental results detailing the design and performance of arrayed waveguide grating (AWG) demultiplexers fabricated in silicon-on-insulator (SOI). The SOI waveguide is inherently multimode because of the high refractive index difference between Si and SiO2, although appropriate tailoring of the rib width to height ratio can be used to make single mode rib waveguides. This single mode condition cannot be met in the input and output combiner sections, which can therefore support many higher order modes. Modeling results demonstrate that coupling from a single mode ridge waveguide to the fundamental slab mode is typically two orders of magnitude larger than the coupling to higher modes. Hence the effect of multimode combiners on performance should be minimal. We also present calculations of bending losses which indicate that with a Si thickness of 1.5 mu m single mode rib waveguides can be made with radii of curvature as low as 200 mu m. Such waveguides can also be made with zero birefringence. AWG devices were fabricated with 8 channels centered around lambda=1550 nm, and chip sizes less than 5 x 5 mm. The performance of these devices is compared with our modeling results.
引用
收藏
页码:11 / 18
页数:8
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