Electrical resistivity in amorphous Si-Ln (Ln: Nd, Sm, Gd) alloy powders prepared by mechanical alloying

被引：10

作者：

Ohba, N ^{[1
]}

Arakawa, T ^{[1
]}

机构：

[1] KINKI UNIV KYUSHU,FAC ENGN,DEPT IND CHEM,IIZUKA,FUKUOKA 820,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 121卷

关键词：

mechanical alloying; rare earth silicides; resistivity; amorphous;

D O I：

10.1016/S0169-4332(97)00270-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous alloys Ln(1-x)Si(x) (Ln: Nd, Sm, Gd) were prepared by means of mechanical alloying in the concentration range 0.33 < x < 0.66. The crystallization behavior was investigated by DTA and XRD. The crystalline phases were observed for Ln(5)Si(3) and LnSi(2), except for a Si-Sm system. The resistivity changes of the crystallized samples obtained by cooling to room temperature exhibited classical metallic behavior. Moreover, at 77-298 K transformation points were observed, lying at 111-116 K for a Si-Nd system, at 93-97 K for a Si-Sm system and at 132-138 K for a Si-Gd system. (C) 1997 Elsevier Science B.V.

引用

页码：125 / 128

页数：4

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