Magnetic Domain Wall Manipulation in (Ga, Mn) As Nanostructures for Spintronic Applications

被引：3

作者：

Wosinski, Tadeusz ^{[1
]}

Andrearczyk, Tomasz ^{[1
]}

Figielski, Tadeusz ^{[1
]}

Olender, Karolina ^{[1
]}

Wrobel, Jerzy ^{[1
]}

Sadowski, Janusz ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 | 2014年 / 1583卷

关键词：

magnetic semiconductors; nanostructures; domain walls; magnetoresistance; spintronics; (GA; MN)AS; MAGNETORESISTANCE;

D O I：

10.1063/1.4865631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ring-shaped nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga, Mn) As. The nanostructures, in a form of planar rings with a slit, were supplied with four electrical terminals and subjected to magneto-transport studies under planar weak magnetic field. Magnetoresistive effects caused by manipulation of magnetic domain walls and magnetization reversal in the nanostructures have been investigated and possible applications of the nanostructures as four-terminal spintronic devices are discussed.

引用

页码：182 / 185

页数：4

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