Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

被引：53

作者：

Gourbilleau, F. ^{[1
]}

Ternon, C. ^{[1
]}

Maestre, D. ^{[2
]}

Palais, O. ^{[2
]}

Dufour, C. ^{[1
]}

机构：

[1] Univ Caen, Ensicaen, CNRS, CEA,UMR,CIMAP, F-14050 Caen 4, France

[2] Univ Paul Cezanne Aix Marseille, CNRS, UMR 6242, IM2NP, F-13397 Marseille 20, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 01期

关键词：

annealing; multilayers; nanostructured materials; photoluminescence; silicon; silicon compounds; solar cells; sputter deposition; transmission electron microscopy; SI/SIO2; SUPERLATTICES; OPTICAL-PROPERTIES; NANOCRYSTALS; LUMINESCENCE; STATES; DYNAMICS; DEFECT; FILMS; GLASS; SIO2;

D O I：

10.1063/1.3156730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si-rich-SiO2(SRSO)/SiO2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100 degrees C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient alpha (in cm(-1)) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls.

引用

页数：7

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