A Diagnostic Tool for Analyzing the Current-Voltage Characteristics in a-Si/c-Si Heterojunction Solar Cells

被引：0

作者：

Chavali, Raghu V. K. ^{[1
]}

Wilcox, John R. ^{[1
]}

Ray, Biswajit ^{[1
]}

Gray, Jeffery L. ^{[1
]}

Alam, Muhammad A. ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

关键词：

amorphous semiconductors; current-voltage characteristics; heterojunctions; process control; silicon; SILICON; TEMPERATURE; MECHANISMS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Understanding the effects of device parameters on carrier transport is essential for the design of high efficiency a-Si/c-Si heterojunction solar cells. It is well known that the dark current-voltage (I-V) characteristics are correlated to fundamental PV parameters that dictate cell performance, and therefore an analysis of dark I-V may be a useful diagnostic tool to monitor changes in the device parameters (indirectly correlated to solar cell efficiency). In this paper, we first measure and then interpret the forward bias dark I-V characteristics of a-Si/c-Si solar cells by numerical and analytical models. Several well-known (but poorly understood) features of dark I-V characteristics are shown to be correlated to parameters of fundamental interest to solar cell design and can therefore be used as important markers of device parameter variation during the development process.

引用

页码：652 / 657

页数：6

共 21 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2]

[Anonymous], 2012, MAT DATA SILICON MAT

[3]

Chavali RVK, 2012, 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), P1014, DOI 10.1109/PVSC.2012.6317774

[4] Universality of non-Ohmic shunt leakage in thin-film solar cells [J].

Dongaonkar, S. ;

Servaites, J. D. ;

Ford, G. M. ;

Loser, S. ;

Moore, J. ;

Gelfand, R. M. ;

Mohseni, H. ;

Hillhouse, H. W. ;

Agrawal, R. ;

Ratner, M. A. ;

Marks, T. J. ;

Lundstrom, M. S. ;

Alam, M. A. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (12)

[5]

Dongaonkar S., 2011, PV ANAL

[6] On the Nature of Shunt Leakage in Amorphous Silicon p-i-n Solar Cells [J].

Dongaonkar, Sourabh ;

Karthik, Y. ;

Wang, Dapeng ;

Frei, Michel ;

Mahapatra, Souvik ;

Alam, Muhammad A. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1266-1268

[7]

Gray J. L., 2011, ADEPT 2 0

[8] Solar cell efficiency tables (Version 38) [J].

Green, Martin A. ;

Emery, Keith ;

Hishikawa, Yoshihiro ;

Warta, Wilhelm ;

Dunlop, Ewan D. .

PROGRESS IN PHOTOVOLTAICS, 2011, 19 (05) :565-572

[9] Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells [J].

Jensen, N ;

Rau, U ;

Hausner, RM ;

Uppal, S ;

Oberbeck, L ;

Bergmann, RB ;

Werner, JH .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) :2639-2645

[10]

Maki K., 2011, 2011 37th IEEE Photovoltaic Specialists Conference (PVSC 2011), P000057, DOI 10.1109/PVSC.2011.6185845

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