Coupled cavity DQW semiconductor lasers

被引：1

作者：

Serpengüzel, A ^{[1
]}

Sagol, BE

Avrutin, EA

De la Rue, RM

Laybourn, PJR

Stanley, CR

机构：

[1] Koc Univ, Dept Phys, TR-80860 Istanbul, Turkey

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[3] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 74卷 / 1-3期

关键词：

coupled cavity; diode laser; semiconductor;

D O I：

10.1016/S0921-5107(99)00539-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Coupled cavity effects has been observed in the electroluminescence spectra of monolithic GaAs/GaAlAs double quantum well graded index separate confinement heterostructure semiconductor diode lasers. A time domain analysis has been performed in order to simulate the experimentally observed results. The theoretically calculated spectra are in good agreement with the experimentally observed spectra. (C) 2000 Elsevier Science S.B. All rights reserved.

引用

页码：80 / 83

页数：4

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