Three-dimensional finite-element thermal simulation of GaN-based HEMTs

被引：78
|
作者：
Bertoluzza, F. [1 ]
Delmonte, N. [1 ]
Menozzi, R. [1 ]
机构：
[1] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy
来源：
MICROELECTRONICS RELIABILITY | 2009年 / 49卷 / 05期
关键词：
ALGAN/GAN HEMTS;
D O I：
10.1016/j.microrel.2009.02.009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：468 / 473
页数：6
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