Structural, dielectric and electrical properties of BiFeO3 and BaTiO3 modified Bi(Mg0.5Ti0.5)O3

Bismuth barium magnesium ferric titanate (Bi0.5Ba0.5) (Mg0.125Ti0.625Fe0.25)O-3 is fabricated through a standard ceramic technology route. By using various experimental techniques, the material has been characterized. Study of crystal structure using XRD (X-ray diffraction) data shows the rhombohedral system. Analysis of dielectric study reveals that the compound has low tangent loss and high dielectric constant at room temperature. At low frequencies and high temperatures, the existence of space charge polarization and the Maxwell-Wagner dielectric mechanism in the material has been realized. The existence of ferroelectricity in the material is confirmed by the PE loop. The impedance plots reveal that the compound shows semiconductor (based on negative temperature of coefficient of temperature) behavior at high temperature >= 300 degrees C. Analysis of Nyquist plots reveals the non-Debye type of dielectric relaxation and the contribution of grains and grain boundaries in the resistive and capacitive nature of the material. From the conductivity analysis, it can be seen that the sample obeys the Josher universal power law, and the Arrhenius type of conductivity. The low-leakage current of compound makes it suitable for the high temperature applications, and hence it shows probable Ohmic-type of conduction mechanism.