Temperature-Dependent Electrical Characteristics of c-Si and CIGS Solar Cells

被引：1

作者：

Choi, Pyung Ho ^{[1
]}

Baek, Do Hyun ^{[1
]}

Park, Hyoung Sun ^{[1
]}

Kim, Sang Sub ^{[1
]}

Yi, Jun Sin ^{[1
]}

Kim, Sang Soo ^{[1
]}

Choi, Byoung Deog ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2014年 / 14卷 / 12期

关键词：

C-Si Solar Cell; CIGS; Electrical Characterization; I-V; C-V; CURRENT TRANSPORT; PARAMETERS;

D O I：

10.1166/jnn.2014.10145

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In1-xGax)Se-2 (CIGS) solar cells by current voltage (I-V) and capacitance voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (E-a) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and Ea in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.

引用

页码：9206 / 9209

页数：4

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