Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots

Carrier capture and relaxation processes in self-assembled 15-Mm In0.5Ga0.5As/GaAs quantum dots are investigated by means of time-resolved photoluminescence spectroscopy. In a systematic study of photoluminescence rise times and barrier decay times (variation of temperature, excitation energy, and excitation density) we aim to identify the physical mechanisms responsible for fast carrier capture and relaxation in quantum dots. Both processes are separated by using appropriate excitation energies. Carrier capture and relaxation are shown to proceed with rates as high as similar to 2x10(10) s(-1) at low temperature even if less than one electron-hole pair per dot and excitation pulse is created. We interpret our results in terms of multiphonon processes at low excitation densities and in terms of Auger processes at high excitation densities.