Structural investigations of gold-to-gold wafer bonding interfaces

被引：6

作者：

Kim, HW ^{[1
]}

Kim, NH ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 110卷 / 01期

关键词：

wafer bonding; Au; bonding interface; structural characterization;

D O I：

10.1016/j.mseb.2004.03.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have reported the wafer bonding of gold (Au)-Au at 400 degreesC using the simple furnace and have investigated the structural properties of the Au-bonded layer. Scanning electron microscopy indicated that the bonding interface was clear and straight and the average interfacial grain size of Au-bonded layer increased by the wafer bonding. X-ray diffraction revealed that the lattice plane spacings of interfacial grains decreased by the wafer bonding and the bonded An layer tended to show the (2 2 0) preferred grain orientation. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：64 / 67

页数：4

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