Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well

被引：45

作者：

Ishihara, Jun ^{[1
]}

Ohno, Yuzo ^{[2
]}

Ohno, Hideo ^{[1
,3
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Tsukuba, Ibaraki 3058573, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[3] Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

SEMICONDUCTORS; ELECTRON;

D O I：

10.7567/APEX.7.013001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using time- and spatially-resolved Kerr microscopy, we directly measure the spatiotemporal evolution of photoexcited local spins of a two-dimensional electron gas in a modulation-doped GaAs/AlGaAs quantum well with a top gate electrode. The spatial pattern of spins after diffusion controlled by a gate voltage that changes the strength of the spin orbit interaction (SOI) field. By measuring the time dependence of spin distribution with an external magnetic field, we successfully observe a persistent spin helix state by tuning the gate voltage, and we obtain both Rashba and Dresselhauss SOI parameters separately. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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