Essential change in crystal qualities of GaN films by controlling lattice polarity in molecular beam epitaxy

被引：57
作者：
Shen, XQ
Ide, T
Cho, SH
Shimizu, M
Hara, S
Okumura, H
Sonoda, S
Shimizu, S
机构：
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Ulvac Japan Ltd, Chigasaki, Kanagawa 2538543, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 1AB期
关键词：
CAICISS; lattice polarity; GaN; Ga-polarity; molecular beam epitaxy;
D O I：
10.1143/JJAP.39.L16
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN heteroepitaxial growth on sapphire (0001) substrates was carried our by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). A Ga-polarity growth was achieved by using an AIN high-temperature buffer layer. The epilayer polarity was characterized directly by coaxial impact collision ion scattering spectra (CAICISS). It was found that the properties of the GaN films showing Ga-face polarity, including their structural and electrical properties, were dramatically improved compared to those of films with N-face polarity. This important conclusion is considered to be a breakthrough in the realization of high-quality III-nitride films by MBE for device applications.
引用
收藏
页码：L16 / L18
页数：3
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