Single CuTCNQ charge transfer complex nanowire as ultra high responsivity photo-detector

被引：25

作者：

Basori, Rabaya ^{[1
]}

Das, K. ^{[1
]}

Kumar, Prashant ^{[2
]}

Narayan, K. S. ^{[2
]}

Raychaudhuri, A. K. ^{[1
]}

机构：

[1] SN Bose Natl Ctr Basic Sci, Theme Unit Excellence Nano Device Technol, Kolkata 700098, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 05期

关键词：

THIN-FILMS; PHOTOCONDUCTIVITY; PHOTODETECTORS; FABRICATION;

D O I：

10.1364/OE.22.004944

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report ultra large photo responsivity R (ratio of photo-generated current to absorbed power) in a single nanowire (NW) device made from a single strand of a nanowire (diameter similar to 30nm and length similar to 200nm) of an organomettalic semiconducting charge transfer complex material of CuTCNQ. The device shows responsivity of 8x10(4) A/Watt at 1 volt applied bias with an enhancement over the dark current exceeding 10(5) at zero bias. The observed photo current has a spectral dependence that strongly follows the main absorption peak (close to 405 nm) showing the primary role of absorbed photo-generated carriers. (C) 2014 Optical Society of America

引用

页码：4944 / 4952

页数：9