Single CuTCNQ charge transfer complex nanowire as ultra high responsivity photo-detector

被引：24
作者：
Basori, Rabaya [1 ]
Das, K. [1 ]
Kumar, Prashant [2 ]
Narayan, K. S. [2 ]
Raychaudhuri, A. K. [1 ]
机构：
[1] SN Bose Natl Ctr Basic Sci, Theme Unit Excellence Nano Device Technol, Kolkata 700098, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India
来源：
OPTICS EXPRESS | 2014年 / 22卷 / 05期
关键词：
THIN-FILMS; PHOTOCONDUCTIVITY; PHOTODETECTORS; FABRICATION;
D O I：
10.1364/OE.22.004944
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report ultra large photo responsivity R (ratio of photo-generated current to absorbed power) in a single nanowire (NW) device made from a single strand of a nanowire (diameter similar to 30nm and length similar to 200nm) of an organomettalic semiconducting charge transfer complex material of CuTCNQ. The device shows responsivity of 8x10(4) A/Watt at 1 volt applied bias with an enhancement over the dark current exceeding 10(5) at zero bias. The observed photo current has a spectral dependence that strongly follows the main absorption peak (close to 405 nm) showing the primary role of absorbed photo-generated carriers. (C) 2014 Optical Society of America
引用
收藏
页码：4944 / 4952
页数：9
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