Optical properties of GaSb/GaAs type- quantum dots grown by droplet epitaxy

被引：37
作者：
Kawazu, Takuya [1 ]
Mano, Takaaki [1 ]
Noda, Takeshi [1 ]
Sakaki, Hiroyuki [1 ,2 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[2] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 468, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期
关键词：
annealing; epitaxial growth; gallium arsenide; gallium compounds; granular materials; III-V semiconductors; photoluminescence; semiconductor quantum dots; spectral line intensity; spectral line shift; wetting; GAAS; GASB; INSB;
D O I：
10.1063/1.3090033
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the optical properties of GaSb/GaAs type- quantum dots (QDs) on a GaAs substrate grown by droplet epitaxy. Ga droplets are formed on GaAs and then exposed to Sb flux to be clad by large granular crystals of Sb. Then the sample was annealed at 380 degrees C to enhance the reaction of Ga droplets with Sb and to evaporate the excess granular layer. In photoluminescence (PL) measurements, the peaks of the QDs and wetting layer (WL) are observed. The PL intensity of the QDs is much stronger than that of the WL, where the ratio I-QD/I-WL of the integral intensities is about 13.3. The PL peaks shift toward higher energies with increasing excitation energy, suggesting that the band lineups exhibit a type- staggered alignment. In addition, we investigate the temperature dependences of the PL peak energy and intensity.
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页数：3
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共 22 条
  • [1] III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
    Balakrishnan, G.
    Tatebayashi, J.
    Khoshakhlagh, A.
    Huang, S. H.
    Jallipalli, A.
    Dawson, L. R.
    Huffaker, D. L.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (16)
  • [2] Bennett BR, 1996, APPL PHYS LETT, V68, P505, DOI 10.1063/1.116381
  • [3] Carrier dynamics in type-II GaSb/GaAs quantum dots
    Hatami, F
    Grundmann, M
    Ledentsov, NN
    Heinrichsdorff, F
    Heitz, R
    Bohrer, J
    Bimberg, D
    Ruvimov, SS
    Werner, P
    Ustinov, VM
    Kop'ev, PS
    Alferov, ZI
    [J]. PHYSICAL REVIEW B, 1998, 57 (08): : 4635 - 4641
  • [4] RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS
    HATAMI, F
    LEDENTSOV, NN
    GRUNDMANN, M
    BOHRER, J
    HEINRICHSDORFF, F
    BEER, M
    BIMBERG, D
    RUVIMOV, SS
    WERNER, P
    GOSELE, U
    HEYDENREICH, J
    RICHTER, U
    IVANOV, SV
    MELTSER, BY
    KOPEV, PS
    ALFEROV, ZI
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (05) : 656 - 658
  • [5] Electron localization by self-assembled GaSb/GaAs quantum dots
    Hayne, M
    Maes, J
    Bersier, S
    Moshchalkov, VV
    Schliwa, A
    Müller-Kirsch, L
    Kapteyn, C
    Heitz, R
    Bimberg, D
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (24) : 4355 - 4357
  • [6] Jiang C, 2004, CONF P INDIUM PHOSPH, P454
  • [7] Sb/As intermixing in self-assembled GaSb/GaAs type II quantum dot systems and control of their photoluminescence spectra
    Jiang, C
    Sakaki, H
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4) : 180 - 184
  • [8] KAWAZU T, PHYSICA STATUS UNPUB
  • [9] Near room temperature droplet epitaxy for fabrication of InAs quantum dots
    Kim, JS
    Koguchi, N
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (24) : 5893 - 5895
  • [10] NEW MBE GROWTH METHOD FOR INSB QUANTUM-WELL BOXES
    KOGUCHI, N
    TAKAHASHI, S
    CHIKYOW, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 688 - 692
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