Cubic group-III nitride-based nanostructures-basics and applications in optoelectronics

被引：61

作者：

As, D. J. ^{[1
]}

机构：

[1] Univ Gesamthsch Paderborn, Dept Phys, D-33098 Paderborn, Germany

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 02期

关键词：

Cubic group-III nitrides; MBE; Intersubband absorption; Cubic HFETs; MOLECULAR-BEAM EPITAXY; QUANTUM-WELLS; GAN; GALLIUM; GROWTH; HEMTS; MBE;

D O I：

10.1016/j.mejo.2008.07.036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular beam epitaxy (MBE) of cubic group-III nitrides is a direct way to eliminate the polarization effects which inherently limits the performance of optoelectronic devices containing quantum well or quantum dot active regions. In this contribution the latest achievement in the MBE of phase-pure cubic GaN, AlN, InN and their alloys will be reviewed. A new reflected high-energy electron beam (RHEED) control technique enables to carefully adjust stoichiometry and to severely reduce the surface roughness, which is important for any hetero-interface. The structural, optical and electrical properties of cubic nitrides and AlGaN/GaN will be presented. We show that no polarization field exists in cubic nitrides and demonstrate 1.55 mu m intersubband absorption in cubic AlN/GaN superlattices. Further the progress towards the development and fabrication of cubic hetero-junction field effect transistors (HFETs) is discussed. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：204 / 209

页数：6

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