Reaction-bonded B4C/SiC composites synthesized by microwave heating

被引：9

作者：

Dutto, Mathieu ^{[1
,2
]}

Goeuriot, Dominique ^{[1
]}

Saunier, Sebastien ^{[1
]}

Marinel, Sylvain ^{[3
]}

Frage, Nachum ^{[2
]}

Hayun, Shmuel ^{[2
]}

机构：

[1] Univ Lyon, Ctr SMS, Mines St Etienne, Dept MPE,UMR 5307 LGF,CNRS, St Etienne, France

[2] Ben Gurion Univ Negev, Dept Mat Engn, Beer Sheva, Israel

[3] Normandie Univ, UNICAEN, CNRS, CRISMAT,ENSICAEN, Caen, France

来源：

INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY | 2019年 / 16卷 / 04期

关键词：

boron carbide; microwaves; reaction bonding; MECHANICAL-PROPERTIES; BORON-CARBIDE; MICROSTRUCTURE; INFILTRATION; TEMPERATURE; ARMOR;

D O I：

10.1111/ijac.13211

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The reaction-bonding technique was used to synthesize boron carbide (B4C) - silicon carbide (SiC) composites by microwave heating. Preforms of porous B4C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400-1500 degrees C, t: 5-120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15-19 GPa) for a much lower density (approximate to 2.5 g/cm(3) for B4C-based material instead of 3.95 g/cm(3) for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.

引用

页码：1287 / 1294

页数：8

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