1.55-μm VCSEL With Enhanced Modulation Bandwidth and Temperature Range

被引：15

作者：

Hofmann, W. ^{[1
]}

Mueller, M. ^{[1
]}

Boehm, G. ^{[1
]}

Ortsiefer, M. ^{[2
]}

Amann, M.-C. ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] VERTILAS GmbH, D-85748 Garching, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 13期

关键词：

InP; optical communications; semiconductor lasers; vertical-cavity surface-emitting laser (VCSEL);

D O I：

10.1109/LPT.2009.2020605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP-based vertical-cavity surface-emitting lasers (VCSELs) at 1.55-mu m emission wavelength with improved modulation bandwidth and temperature behavior are demonstrated. Utilizing an improved active region, thermal design, and reduced chip parasitics, a superior modulation-bandwidth >10 GHz is achieved up to 85 degrees C. The new VCSEL device is compared in detail with our reference design, analyzing all bandwidth-limiting elements. With their improved temperature range at invariant output power and minimal threshold change with temperature these VCSELs are especially qualified for uncooled operation in passive optical networks. Potential bit rates of 12.5 or even 17 Gb/s are expected with this kind of devices for cost-effective 100-G Ethernet solutions at metro-range.

引用

页码：923 / 925

页数：3

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