Emission of mid-infrared radiation and intersubband population inversion in near-infrared laser QW structures

被引:2
|
作者
Vorobjev, LE
Firsov, DA
Shalygin, VA
Alferov, ZI
Ledentsov, NN
Ustinov, VM
Shernyakov, YM
Tulupenko, VN
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg State Tech Univ, Dept Radiat Phys, St Petersburg 195251, Russia
[3] Donbass State Engn Acad, UA-343913 Kramatorsk, Ukraine
来源
PHYSICA E | 2000年 / 7卷 / 1-2期
基金
俄罗斯基础研究基金会;
关键词
near-infrared lasing; stimulated emission; current injection; optical pumping;
D O I
10.1016/S1386-9477(99)00297-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A new possibility to obtain the intersubband population inversion under current injection (or optical pumping) of the electrons into the structure with GaAs/AlGaAs quantum wells (QWs) is discussed. The QWs are embedded into the i-layer of a p+-i-n(+) heterostructure. We consider QWs of funnel shape with three electron levels and find the conditions to realize mid-infrared (MIR)-stimulated emission due to intersubband electron transitions under simultaneous stimulated emission of near-infrared (NIR) radiation due to interband transitions. Experimental data on spontaneous MIR emission from InGaAs/GaAs QWs under simultaneous NIR lasing are presented. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:241 / 244
页数:4
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