Optimization of Ni-Cr flux growth for hexagonal boron nitride single crystals

被引：69

作者：

Hoffman, T. B. ^{[1
]}

Clubine, B. ^{[1
]}

Zhang, Y. ^{[1
]}

Snow, K. ^{[1
]}

Edgar, J. H. ^{[1
]}

机构：

[1] Kansas State Univ, Dept Chem Engn, Manhattan, KS 66506 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 393卷

基金：

美国国家科学基金会;

关键词：

Crystal morphology; Single crystal growth; Growth from solutions; Semiconducting III-V materials; Nitrides; ATMOSPHERIC-PRESSURE; LOW-TEMPERATURE; GRAPHENE;

D O I：

10.1016/j.jcrysgro.2013.09.030

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Hexagonal boron nitride(hBN) single crystals were grown using a Ni-Cr flux growth method. The crystallization cooling rate, soak temperature and soak time were controlled to determine their effect on crystal size and quality. A cooling rate of 2 degrees C/h produced the best quality hBN crystals. The maximum crystal width increased with soak temperature from 1 mm at 1450 degrees C to 5 mm at 1700 degrees C. The crystal thickness decreased with soak temperature from 500 mu m at 1500 degrees C to 40 mu m at 1700 degrees C. A soak time of 24 to 48h produced the maximum crystal thickness. X-ray diffraction and Raman spectroscopy confirmed that the crystals were highly ordered and of high purity. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：114 / 118

页数：5

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