Nuclear Spin Relaxation Mediated by Fermi-Edge Electrons in n-Type GaAs

被引：10

作者：

Kotur, M. ^{[1
]}

Dzhioev, R. I. ^{[1
]}

Kavokin, K. V. ^{[1
,2
]}

Korenev, V. L. ^{[1
]}

Namozov, B. R. ^{[1
]}

Pak, P. E. ^{[1
]}

Kusrayev, Yu G. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg State Univ, Spin Opt Lab, St Petersburg 198504, Russia

来源：

JETP LETTERS | 2014年 / 99卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

SEMICONDUCTORS; POLARIZATION; STATE;

D O I：

10.1134/S0021364014010068

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T-1 in semiconductors. It was applied to bulk n-type GaAs, where T-1 was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (<30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with n(D) = 9 x 10(16) cm(-3) was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T-1 with the change in magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.

引用

页码：37 / 41

页数：5

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