Reversible changes in the lattice site structure for In implanted into GaN

被引：17

作者：

Lorenz, K ^{[1
]}

Ruske, F ^{[1
]}

Vianden, R ^{[1
]}

机构：

[1] Univ Bonn, Inst Strahlen & Kernphys, D-53115 Bonn, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 24期

关键词：

D O I：

10.1063/1.1485117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The perturbed angular correlation method was employed to study the lattice environment of In implanted into GaN. It was found, after annealing the implantation induced damage, that 65% of the implanted atoms were situated in regular undisturbed Ga lattice sites. The remaining fraction showed an unusual behavior insofar as its lattice surroundings changed reversibly from undisturbed at temperatures above 600 K to strongly disturbed at low temperatures. (C) 2002 American Institute of Physics.

引用

页码：4531 / 4533

页数：3

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