EFFECT OF EXCESS BISMUTH ON THE SYNTHESIS OF BISMUTH SILICATE (Bi4Si3O12) POLYCRYSTALS

被引：4

作者：

Kaewkhao, J. ^{[2
]}

Udomkan, N. ^{[1
]}

Chewpraditkul, W. ^{[3
]}

Limsuwan, P. ^{[3
]}

机构：

[1] Srinakharinwirot Univ, Fac Sci, Dept Phys, Bangkok 10110, Thailand

[2] Nakhon Pathom Rajabhat Univ, Fac Sci & Technol, GMSRU, Nakhon Pathom 73000, Thailand

[3] King Mongkuts Univ Technol Thonburi, Dept Phys, Bangkok 10110, Thailand

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2009年 / 23卷 / 08期

关键词：

Bi4Si3O12; excess bismuth; X-ray diffraction; scanning electron microscope; CRYSTAL-GROWTH; SCINTILLATION;

D O I：

10.1142/S0217979209052054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, the effect of bismuth content on the crystal structure and morphology of bismuth silicate (BSO : Bi4Si3O12) polycrystals were investigated with X-ray diffraction (XRD) analysis and scanning electron microscope (SEM). BSO materials have been successfully prepared by the solid-state reaction. The BSO phase was crystallized at 950 degrees C for 12 h. In summary, 10% of excess bismuth was found to be the optimum composition with respect to crystallization, morphology, and grain size.

引用

页码：2093 / 2099

页数：7

共 11 条

[1]

Fei YT, 2000, PROG CRYST GROWTH CH, V40, P189, DOI 10.1016/S0960-8974(00)00004-8

[2] The influence of temperature gradient on energy resolution of Bi4Ge3O12 (BGO) crystal [J].