ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell

被引：23

作者：

Bethge, O. ^{[1
]}

Nobile, M. ^{[1
]}

Abermann, S. ^{[2
]}

Glaser, M. ^{[1
]}

Bertagnolli, E. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[2] Austrian Inst Technol, Dept Energy, A-1210 Vienna, Austria

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 117卷

基金：

奥地利科学基金会;

关键词：

SIS solar cell; AZO; Tunnel barrier; Metal oxides; ALD; XPS; THIN-FILMS; TRANSPARENT; PHOTOLUMINESCENCE; SPECTROSCOPY; DEPOSITION;

D O I：

10.1016/j.solmat.2013.04.028

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current-density as low as 3 x 10(-7) A/cm(2), a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.

引用

页码：178 / 182

页数：5

共 39 条

[1] Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si [J].

Afanas'ev, VV ;

Houssa, M ;

Stesmans, A ;

Adriaenssens, GJ ;

Heyns, MM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 303 (01) :69-77

[2] Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition [J].

Agura, H ;

Suzuki, A ;

Matsushita, T ;

Aoki, T ;

Okuda, M .

THIN SOLID FILMS, 2003, 445 (02) :263-267

[3] Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films [J].

Banerjee, Parag ;

Lee, Won-Jae ;

Bae, Ki-Ryeol ;

Lee, Sang Bok ;

Rubloff, Gary W. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (04)

[4]

Bhakta S., 2005, INT J THERMODYNAMICS, V8, P175

[5] Second harmonic generation in laser ablated zinc oxide thin films [J].

Cao, H ;

Wu, JY ;

Ong, HC ;

Dai, JY ;

Chang, RPH .

APPLIED PHYSICS LETTERS, 1998, 73 (05) :572-574

[6] The effect of chemical states of dopants on the microstructures and band gaps of metal-doped ZrO2 thin films at different temperatures [J].

Chang, SM ;

Doong, RA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (46) :18098-18103

[7] Low temperature Si doped ZnO thin films for transparent conducting oxides [J].

Clatot, J. ;

Campet, G. ;

Zeinert, A. ;

Labrugere, C. ;

Nistor, M. ;

Rougier, A. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (08) :2357-2362

[8] Atomic layer deposition of Y2O3 thin films from yttrium tris(N,N'-diisopropylacetamidinate) and water [J].

de Rouffignac, P ;

Park, JS ;

Gordon, RG .

CHEMISTRY OF MATERIALS, 2005, 17 (19) :4808-4814

[9] PREPARATION AND DOPING OF ZINC-OXIDE USING SPRAY-PYROLYSIS [J].

DEMERCHANT, J ;

COCIVERA, M .

CHEMISTRY OF MATERIALS, 1995, 7 (09) :1742-1749

[10]

DeWolf I, 1996, SEMICOND SCI TECH, V11, P139, DOI 10.1088/0268-1242/11/2/001

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