A novel N-channel MOSFET featuring an integrated schottky and no internal P-N junction

被引：0

作者：

Mirchandani, A ^{[1
]}

Thapar, N ^{[1
]}

Boden, T ^{[1
]}

Sodhi, R ^{[1
]}

Kinzer, D ^{[1
]}

机构：

[1] Int Rectifier Corp, El Segundo, CA 90245 USA

来源：

ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new MOSFET structure with an integrated Schottky junction in every unit cell and with no p-n junction in the current flow path. This eliminates the injected reverse recovery charge while providing a low forward voltage drop anti-parallel Schottky diode. Gate controlled current conduction in the on-state takes place through an accumulated channel region formed along the trench sidewall. A specific on-resistance of 10.6mOmega-mm(2) and 7.6mOmega-mm(2) for a gate bias of 4.5V and 10V respectively has been achieved, with a forward blocking voltage of over 30V. This coupled with no reverse recovery charge makes the device very suitable for high frequency DC-DC converter applications.

引用

页码：405 / 408

页数：4

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