A novel N-channel MOSFET featuring an integrated schottky and no internal P-N junction

被引：0

作者：

Mirchandani, A ^{[1
]}

Thapar, N ^{[1
]}

Boden, T ^{[1
]}

Sodhi, R ^{[1
]}

Kinzer, D ^{[1
]}

机构：

[1] Int Rectifier Corp, El Segundo, CA 90245 USA

来源：

ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new MOSFET structure with an integrated Schottky junction in every unit cell and with no p-n junction in the current flow path. This eliminates the injected reverse recovery charge while providing a low forward voltage drop anti-parallel Schottky diode. Gate controlled current conduction in the on-state takes place through an accumulated channel region formed along the trench sidewall. A specific on-resistance of 10.6mOmega-mm(2) and 7.6mOmega-mm(2) for a gate bias of 4.5V and 10V respectively has been achieved, with a forward blocking voltage of over 30V. This coupled with no reverse recovery charge makes the device very suitable for high frequency DC-DC converter applications.

引用

页码：405 / 408

页数：4

共 50 条

[1] AN N-CHANNEL MOSFET WITH SCHOTTKY SOURCE AND DRAIN
MOCHIZUKI, T
WISE, KD
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) : 108 - 111
[2] The Study of p-n and Schottky Junction for Magnetodiode
Phetchakul, Toempong
Luanatikomkul, Wittaya
Leepattarapongpan, Chana
Chaowicharat, Ekalak
Pengpad, Putapon
Poyai, Amporn
APPLIED MATERIALS AND ELECTRONICS ENGINEERING, PTS 1-2, 2012, 378-379 : 663 - +
[3] Physical limitation of p-n junction - statistical variations of p-n junction depth in MOSFET array
Mizuno, T
SOLID-STATE ELECTRONICS, 2003, 47 (06) : 957 - 962
[4] Ambipolar Leakage Suppression in Ge n-channel Schottky Barrier MOSFET
Kale, Sumit
Kondekar, Pravin Neminath
IETE JOURNAL OF RESEARCH, 2015, 61 (04) : 323 - 328
[5] GaN nanorod Schottky and p-n junction diodes
Deb, Parijat
Kim, Hogyoung
Qin, Yexian
Lahiji, Roya
Oliver, Mark
Reifenberger, Ronald
Sands, Timothy
NANO LETTERS, 2006, 6 (12) : 2893 - 2898
[6] Comparison of GaN Schottky barrier and p-n junction photodiodes
Malachowski, M
Rogalski, A
PHOTODETECTORS: MATERIALS AND DEVICES III, 1998, 3287 : 206 - 213
[7] P-N JUNCTION-SCHOTTKY BARRIER HYBRID DIODE
ZETTLER, RA
COWLEY, AM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 58 - +
[8] High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions
Liu, Xiaochi
Pan, Yuchuan
Yang, Junqiang
Qu, Deshun
Li, Huamin
Yoo, Won Jong
Sun, Jian
APPLIED PHYSICS LETTERS, 2021, 118 (23)
[9] Topological p-n junction
Wang, Jing
Chen, Xi
Zhu, Bang-Fen
Zhang, Shou-Cheng
PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 187 - +
[10] P-N JUNCTION TRANSISTORS
SHOCKLEY, W
SPARKS, M
TEAL, GK
PHYSICAL REVIEW, 1951, 83 (01): : 151 - 162

← 1 2 3 4 5 →