Radical-Doped Metal-Organic Framework: Route to Nanoscale Defects and Magnetostructural Functionalities

被引:30
|
作者
Poryvaev, Artem S. [1 ,3 ]
Polyukhov, Daniil M. [1 ,4 ]
Gjuzi, Eva [2 ]
Hoffmann, Frank [2 ]
Froeba, Michael [2 ]
Fedin, Matvey V. [1 ,3 ]
机构
[1] RAS, SB, Int Tomog Ctr, Inst Skaya Str 3a, Novosibirsk 630090, Russia
[2] Univ Hamburg, Inst Inorgan & Appl Chem, Martin Luther King Pl 6, D-20146 Hamburg, Germany
[3] Novosibirsk State Univ, Pirogova Str 2, Novosibirsk 630090, Russia
[4] RAS, SB, NN Vorozhtsov Inst Organ Chem, Novosibirsk 630090, Russia
关键词
ELECTRON-PARAMAGNETIC-RESONANCE; GAS-ADSORPTION; AEROBIC OXIDATION; CUPRIC IONS; DERIVATIVES; MIL-53; EPR; SPECTROSCOPY; BEHAVIOR; LINKER;
D O I
10.1021/acs.inorgchem.9b00696
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Nanosized structural defects in metal-organic frameworks (MOFs) attract growing attention and often remarkably enhance functional properties of these materials for various applications. In this work, a series of MOFs [Cu-2(TPTA)(1-x)(BDPBTR)(x)] (H(4)TPTA, [1,1':3',1 ''-terphenyl]-3,3 '',5,5 ''-tetracarboxylic acid; H4BDPBTR, 1,3-bis(3,5,dicarboxyphenyl)-1,2,4-benzotriazin-4-yl radical)) with a new stable radical linker doped into the structure has been synthesized and investigated using Electron Paramagnetic Resonance (EPR). Mixed linkers H(4)TPTA and H4BDPBTR were used to bridge copper(II) paddle-wheel units into a porous framework, where H4BDPBTR is the close structural analogue of H(4)TPTA. MOFs with various x = 0-0.4 were investigated. EPR studies indicated that the radical linker binds to the copper(II) units differently compared to diamagnetic linker, resulting in the formation of nanosized structural defects. Moreover, remarkable kinetic phenomena were observed upon cooling of this MOF, where slow structural rearrangements and concomitant changes of magnetic interactions were induced. Thus, our findings demonstrate that doping of structurally mimicking radical linkers into MOFs represents an efficient approach for designing target nanosized defects and introducing new magnetostructural functionalities for a variety of applications.
引用
收藏
页码:8471 / 8479
页数:9
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