Leakage current evolution versus dielectric thickness in lead zirconate titanate thin film capacitors

被引：21

作者：

Chentir, Mohamed-Tahar ^{[1
,2
]}

Bouyssou, Emilien ^{[2
]}

Ventura, Laurent ^{[1
]}

Anceau, Christine ^{[2
]}

机构：

[1] Univ Tours, Lab Microelect Puissance, F-37071 Tours 2, France

[2] STMicroelectronics, F-37071 Tours 2, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 06期

关键词：

electrodes; high-k dielectric thin films; lead compounds; leakage currents; Poole-Frenkel effect; Schottky effect; thin film capacitors; SOL-GEL;

D O I：

10.1063/1.3055416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the evolution of lead zirconate titanate (PZT) capacitor leakage current mechanism as a function of dielectric thickness has been investigated. It has been pointed out that PZT leakage current switches from Schottky to Poole-Frenkel conduction mechanisms as PZT thickness decreases. The leakage current evolution seems to be dependant on the presence of a dead layer at metal/PZT interface. The dead layer thickness is estimated at about 40 nm. The switch from an interface limited conduction mode to a bulk limited mode can be attributed to the presence of a higher defect concentration in the dead layer in comparison with PZT bulk.

引用

页数：7

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