Temperature-Gradient Post-Growth Annealing of CdMnTe Wafers for Nuclear Radiation Detection Applications

被引：0

作者：

Egarievwe, Stephen U. ^{[1
]}

Kithinji, David K. ^{[1
]}

Jow, Julius O. ^{[1
]}

Egarievwe, Alexander A. ^{[1
]}

Hales, Zaveon M. ^{[1
]}

Martin, Richard D. ^{[1
]}

Chan, Wing ^{[1
]}

Yang, Ge ^{[2
]}

Camarda, Giuseppe S. ^{[2
]}

James, Ralph B. ^{[2
]}

机构：

[1] Alabama A&M Univ, Nucl Engn & Radiol Sci Ctr, Normal, AL 35762 USA

[2] Brookhaven Natl Lab, Dept Nonproliferat & Natl Secur, Upton, NY 11973 USA

来源：

2014 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC) | 2014年

关键词：

TE INCLUSIONS; CDTE; CRYSTALS; COMPENSATION; PERFORMANCE; GROWTH;

D O I：

暂无

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Cadmium Manganese Telluride (CdMnTe) is one of the semiconductor materials recently being developed as X-ray and gamma-ray detectors capable of operating at room temperature. This paper presents the results of temperature gradient post-growth annealing of CdMnTe crystals grown by Bridgman technique. Migration of Te inclusions from the low-temperature side to the high-temperature side of CdMnTe wafers was recorded for an annealing temperature of 715 degrees C at a temperature gradient of 24 degrees C/cm and annealing time of 30 minutes. Size reduction and elimination of Te inclusions were also recorded for a CdMnTe wafer annealed at 730 degrees C with a temperature gradient of 18 degrees C/cm for 18 hours. A two-dimensional analysis of an 810 x 1350 mu m(2) sample area showed a 76% reduction in the Te-inclusion concentration.

引用

页数：4

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