Defect-related vibrational and photoluminescence spectroscopy of a codoped ZnO: Al : N film

被引：15
作者：
He, Haiping [1 ]
Zhuge, Fei [1 ]
Ye, Zhizhen [1 ]
Zhu, Liping [1 ]
Zhao, Binghui [1 ]
Huang, Jingyun [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2006年 / 39卷 / 11期
关键词：
D O I：
10.1088/0022-3727/39/11/004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fourier transform infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the defects in a codoped ZnO : Al : N film grown on a Si ( 111) substrate. Two broad vibrational modes around 3000 and 3120 cm(-1) were found, which may be attributed to the formation of N-H bonds in different configurations. The room temperature PL spectrum of the ZnO : Al : N film exhibited two dominant emissions centred at 3.04 and 2.77 eV. PL decay and x-ray photoelectron spectroscopy results suggested that the 3.04 eV emission is not likely due to zinc vacancy. We assumed that it might correlate with the N-related defect. The 2.77 eV emission was tentatively assigned to recombination involving an unknown deep localized defect.
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页码：2339 / 2342
页数：4
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